Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Toshiba transistor silicon npn epitaxial type pct process 2sc2705 audio frequency amplifier applications small collector output capacitance. The leads were anchored in a small glass block, allowing the transistor to be constructed above it, and then the whole upper part was sealed in a white epoxy block. Here is an image showing the pin diagram of the this transistor. Silicon transistor 2sc1623 features high dc current gain. Click here specifications bipolar transistor transistor polarity. H absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6 v to92 625 mw collector dissipation sot89 pc 500 mw. Elektronische bauelemente ss8050 npn silicon general purpose transistor 26oct2009 rev. Mmbt5551m3 npn high voltage transistor the mmbt5551m3 device is a spin. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals. Onsemi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Discrete semiconductors data sheet book, halfpage m3d186 2n5550. Page 2 of 3 electrical characteristics t ambient25.
Npn darlington transistor this device is designed for applications requiring extremely high current gain at currents to 1. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. Pinning pin description 1 collector 2 base 3 emitter fig. Datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. Npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. Data sheet maximum ratings parameter bip 373 bosch microelectronics symbol value unit v 250 250 14 200 450 150 collector emitter breakdown voltage at 20ma. Please consult the most recently issued data sheet before initiating or completing a design. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current.
Our payment security system encrypts your information during transmission. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. It also has decent switching characteristics so can amplify lowlevel signals. It is designed for general purpose high voltage applications and is housed in the sot. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. C945 datasheet, c945 pdf, c945 data sheet, datasheet, data sheet, pdf. C unless noted otherwise mmbt5401 symbol description min. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Toshiba transistor silicon npn epitaxial type pct process. Maximum ratings ta 25c characteristics symbol rating unit collectorbase voltage v cbo 150 v. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. The product status of the devices described in this data sheet may have changed since this data sheet was published. Free devices maximum ratings rating symbol value unit collector. Nov 30, 2015 transistor gain drops with increasing frequency.
Datasheet search engine for electronic components and semiconductors. The 2n32 is an rca pointcontact transistor in a singleended package that has all leads emerging from the same end. Vceo 50 v absolute maximum ratings maximum voltages and current ta 25. Bc177bc177b series low power bipolar transistors page 2 210406 v1. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free. Amplifier transistors npn silicon features these are pb.
Npn silicon transistoraf amplifier and low speed switching nec. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. High gainbandwidth product charac teristic provides excellent performance in a variety of small signal and linear amplifier applications, 1a a r b a style 1 d0 2 1003. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. Vceo 50 v min, ic 150 ma max excellent hfe linearity. Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. C page 2 of 2 any changes of specification will not. Specifications may change in any manner without notice. 2n5551 transistor pinout, features, equivalent & datasheet. The 2n5551c is manufactured in a plastic to92 case. Obviously, amplifiers and oscillators should operate somewhat below this frequency. We dont share your credit card details with thirdparty sellers, and we dont sell your information to others. Dec 21, 2017 the 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Jul 05, 2017 c2073 datasheet vceo 150v, npn power transistor mospec, 2sc2073 datasheet, c2073 pdf, c2073 pinout, c2073 data, c2073 crcuit, output, c2073 schematic.
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